Semiconductor devices, a fluid sensor and a method for forming a semiconductor device

ABSTRACT

A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×10 11  quantum structures per cm 2 . The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.

RELATED APPLICATION

This application claims priority under 35 U.S.C. §119 to German PatentApplication No. 102015108402.3, filed on May 28, 2015, the content ofwhich is incorporated by reference herein in its entirety.

TECHNICAL FIELD

Embodiments relate to detection systems and in particular tosemiconductor devices, a fluid sensor and a method for forming asemiconductor device.

BACKGROUND

Mid-infrared (MIR) sources and detectors may be used in optoelectronicand photonic devices applications. Sources and detectors having indirectelectronic band gaps may be inefficient emitters and detector of light,for example. Using nanotechnology, efficient emission and absorption oflight may be achieved. By the scaling down and designing ofnanostructures, efficiency of MIR sources and MIR detectors may beimproved, for example.

SUMMARY

It is a demand to provide emitters and detectors with improvedefficiency.

Such a demand may be satisfied by the subject-matter of the claims.

Some embodiments relate to a semiconductor device. The semiconductordevice comprises a plurality of quantum structures comprisingpredominantly germanium. The plurality of quantum structures are formedon a first semiconductor layer structure. The quantum structures of theplurality of quantum structures have a lateral dimension of less than 15nm and an area density of at least 8×10¹¹ quantum structures per cm².The plurality of quantum structures are configured to emit light with alight emission maximum at a wavelength of between 2 μm and 10 μm or toabsorb light with a light absorption maximum at a wavelength of between2 μm and 10 μm.

Some embodiments relate to a further semiconductor device. Thesemiconductor device comprises a plurality of quantum structures formedon a first semiconductor layer structure. The quantum structures of theplurality of quantum structures have a lateral dimension of less than 15nm. The plurality of quantum structures comprise germanium and antimony.The plurality of quantum structures are configured to emit light with alight emission maximum at a wavelength of between 5 μm and 7 μm or toabsorb light with a light absorption maximum at a wavelength of between5 μm and 7 μm.

Some embodiments relate to a further semiconductor device. Thesemiconductor device comprises a quantum well layer stack comprising aplurality of first quantum well layers and a plurality of second quantumwell layers. The first quantum well layers of the plurality of firstquantum well layers and the second quantum well layers of the pluralityof second quantum well layers are arranged alternatingly on asemiconductor layer structure. The first quantum well layers of theplurality of first quantum well layers comprise silicon-germanium andthe second quantum well layers of the plurality of second quantum welllayers comprise silicon. The first quantum well layers of the pluralityof first quantum well layers and the second quantum well layers of theplurality of second quantum well layers have a thickness of below 100nm. The quantum well layer stack is configured to emit light with alight emission maximum at a wavelength of between 2 μm and 10 μm or toabsorb light with a light absorption maximum at a wavelength of between2 μm and 10 μm.

Some embodiments relate to a method for forming a semiconductor device.The method comprises forming a plurality of quantum structurescomprising predominantly germanium on a first semiconductor layerstructure. The quantum structures of the plurality of quantum structureshave a lateral dimension of less than 15 nm and an area density of atleast 1×10¹⁰ quantum structures per cm². The plurality of quantumstructures are configured to emit light with a light emission maximum ata wavelength of between 2 μm and 10 μm or to absorb light with a lightabsorption maximum at a wavelength of between 2 μm and 10 μm, whereinthe plurality of quantum structures are grown at least by using lowpressure chemical vapor deposition.

Some embodiments relate to a fluid sensor comprising a detectorcomprising a processing module configured to generate a detection signalbased on light emitted by an emitter and propagated through a fluid. Thedetector or the emitter comprises a plurality of quantum structurescomprising predominantly germanium. The plurality of quantum structuresare formed on a first semiconductor layer structure. The quantumstructures of the plurality of quantum structures have a lateraldimension of less than 15 nm and an area density of at least 1×10¹⁰quantum structures per cm². The plurality of quantum structures areconfigured to emit light with a light emission maximum at a wavelengthof between 2 μm and 10 μm or to absorb light with a light absorptionmaximum at a wavelength of between 2 μm and 10 μm.

Some embodiments of apparatuses and/or methods will be described in thefollowing by way of example only, and with reference to the accompanyingfigures, in which

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1A shows a schematic illustration of a semiconductor deviceaccording to an embodiment;

FIG. 1B shows a schematic illustration of a further semiconductor deviceaccording to an embodiment;

FIG. 1C shows a schematic illustration of a further semiconductor devicearranged on a substrate according to an embodiment;

FIG. 1D shows a schematic illustration of a further semiconductor devicecomprising a first semiconductor layer structure according to anembodiment;

FIG. 1E shows a schematic illustration of a further semiconductor devicecomprising a plurality of quantum structure layer stacks according to anembodiment;

FIG. 2A shows a flow chart of a method for forming a semiconductordevice according to an embodiment;

FIGS. 2B to 2E show a schematic illustration of a method for forming asemiconductor device according to an embodiment;

FIG. 3A shows a schematic illustration of a semiconductor devicecomprising a quantum well layer stack according to an embodiment;

FIG. 3B shows a schematic illustration of a further semiconductor devicecomprising a quantum well layer stack according to an embodiment;

FIG. 3C shows a schematic illustration of part of the quantum well layerstack of a semiconductor device according to an embodiment;

FIG. 4 shows a flow chart of a method for forming a semiconductor deviceaccording to an embodiment;

FIGS. 5A to 5E show schematic illustrations of detection systemscomprising an emitter device and a detector device according to variousembodiments;

FIG. 6 shows a schematic illustration of the band structure of Ge andSi.

FIG. 7 shows a schematic illustration of a fluid sensor according to anembodiment.

DETAILED DESCRIPTION

Various example embodiments will now be described more fully withreference to the accompanying drawings in which some example embodimentsare illustrated. In the figures, the thicknesses of lines, layers and/orregions may be exaggerated for clarity.

Accordingly, while example embodiments are capable of variousmodifications and alternative forms, embodiments thereof are shown byway of example in the figures and will herein be described in detail. Itshould be understood, however, that there is no intent to limit exampleembodiments to the particular forms disclosed, but on the contrary,example embodiments are to cover all modifications, equivalents, andalternatives falling within the scope of the disclosure. Like numbersrefer to like or similar elements throughout the description of thefigures.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent,” etc.).

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments belong. Itwill be further understood that terms, e.g., those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art.However, should the present disclosure give a specific meaning to a termdeviating from a meaning commonly understood by one of ordinary skill,this meaning is to be taken into account in the specific context thisdefinition is given herein.

FIG. 1A shows a schematic illustration of a semiconductor device 100according to an embodiment.

The semiconductor device 100 includes a plurality of quantum structures101 comprising predominantly germanium (Ge). The plurality of quantumstructures 101 are formed on a first semiconductor layer structure 102.The quantum structures of the plurality of quantum structures 101 have alateral dimension, L, of less than 15 nm and an area density of at least8×10¹¹ quantum structures per cm². The plurality of quantum structures101 are configured to emit light with a light emission maximum at awavelength of between 2 μm and 10 μm or to absorb light with a lightabsorption maximum at a wavelength of between 2 μm and 10 μm.

Due to the quantum structures of the plurality of quantum structures 101having a lateral dimension of less than 15 nm and an area density of atleast 8×10¹¹ quantum structures per cm², a semiconductor device capableof emitting or absorbing light at wavelengths of importance for sensingand chemical imaging may be achieved or improved, for example. Forexample, the semiconductor device may be capable of sensing and chemicalimaging in the automotive industry, of environmental sensing infactories and buildings and of humidity sensing. Furthermore, thesemiconductor device may be capable of night vision, tomography oroptical and digital imaging, for example.

A quantum structure of the plurality of quantum structures 101 may be asemiconductor structure. For example, the quantum structure may be grownor formed from or comprise a semiconductor material. A quantum structuremay exhibit quantum mechanical properties due to its size. For example,excitons of the quantum structure may be confined in three spatialdimensions (e.g. along an x-axis, a y-axis and a z-axis). The pluralityof quantum structures 101 may be or may include quantum dots, forexample.

The lateral dimension, L, of the quantum structure of the plurality ofquantum structures 101 may be a length, or a breadth of the quantumstructure, for example. Additionally, alternatively or optionally, thelateral dimension may be a height or a diameter of the quantumstructure, for example. The quantum structures of the plurality ofquantum structures 101 may have an average or maximum lateral dimensionof less than 15 nm (or e.g. less than 10 nm), for example. For example,an average or maximum lateral dimension of the plurality of quantumstructures 101 may be about 15 nm.

An area density of the plurality of quantum structures 101 may be atleast 8×10¹¹ quantum structures per cm². The area density may refer to anumber of quantum structures per cm² formed on a semiconductor layer ofthe first semiconductor layer structure 102, for example. Optionally,the area density may lie between 1×10¹⁰ quantum structures per cm² and1×10¹³ quantum structures per cm², for example. A separation distance,S, between neighboring quantum structures may be between 10 nm and 700nm (or e.g. between 15 nm and 650 nm, or e.g. between 20 nm and 600 nm),for example. For example, the separation distance may be about 15 nm.

A (or each) quantum structure of the plurality of quantum structures 101may be configured to emit light. Light emission may occur based on arelaxation of an excited electron to a ground state and recombinationwith a hole, for example. The plurality of quantum structures 101 may beconfigured to emit light and within a range or spectra of wavelengths.The light emission maximum (may be between 2 μm and 10 μm (or e.g.between 3 μm and 7.5 μm, or e.g. between 4 μm and 7 μm), for example.The light emission maximum may be a range of wavelengths within which amaximum spectral power or emission intensity is achieved, for example.For example, the light emission maximum may be a range of wavelengthswithin which greater than 50% (or e.g. greater than 70% or e.g. greaterthan 80%) of emitted light has a spectral wavelength falling within thatrange.

A (or each) quantum structure of the plurality of quantum structures 101may be configured to absorb light. Light absorption may occur based on aquantum energy of a received photon matching an energy band gap of thequantum structure structures, for example. The plurality of quantumstructures 101 may be configured to absorb light within a range orspectra of wavelengths. The light absorption maximum (may be between 5μm and 7 μm (or e.g. between 4.5 μm and 7.5 μm, or e.g. between 5.5 μmand 6.5 μm), for example. The light absorption maximum may be a range ofwavelengths within which maximum absorption is achieved, for example.For example, the light absorption maximum may be a range of wavelengthswithin which greater than 50% (or e.g. greater than 70% or e.g. greaterthan 80%) of absorbed light has a spectral wavelength falling withinthat range.

The plurality of quantum structures 101 may be pyramid shaped or domeshaped. The shape of the plurality of quantum structures may be based ona number of (germanium) monolayers forming the plurality of quantumstructures 101. As the number of monolayers forming the quantumstructures increases, the shape of the quantum structures may changefrom pyramid shaped to dome shaped. In other words, quantum structureshaving fewer monolayers of germanium (e.g. less than 20) may be pyramidshaped and quantum structures having more monolayers (e.g. more than 30)of germanium may be dome shaped.

Additionally, alternatively or optionally, the plurality of quantumstructures 101 may include germanium and antimony. For example, theplurality of quantum structures may include between 1% to 20% (or e.g.between 1% to 10%, or e.g. 5%) antimony. The plurality of quantumstructures 101 may include germanium inter-diffused with antimony, forexample.

The first semiconductor layer structure 102 may include (or may be) atleast one semiconductor layer. Optionally, the first semiconductor layerstructure 102 may include a plurality of semiconductor layers.

The first semiconductor layer structure 102 may include a first silicon(Si) (epitaxial or monocrystalline) sub-layer having a doping of a firstconductivity type (e.g. p-type), for example. In other words, the firstsilicon sub-layer may be a p-doped silicon layer. The first siliconsub-layer may be formed on (or e.g. directly on) a semiconductorsubstrate.

The semiconductor substrate may be a silicon-based semiconductorsubstrate, such as an intrinsic or doped (e.g. p-doped or n-doped)silicon substrate, or a silicon carbide (SiC) based semiconductorsubstrate, or a silicon nitride (Si₃N₄) based semiconductor substrate.Alternatively or optionally, the semiconductor substrate may be agallium arsenide-based semiconductor substrate or gallium nitride-basedsemiconductor substrate, for example. The semiconductor substrate may bea boron doped p+ silicon substrate, for example. The semiconductorsubstrate may be a silicon on insulator (SOI) substrate, for example.

The semiconductor substrate may have a thickness of between 100 μm and800 μm (e.g. 725 μm), for example.

The first silicon sub-layer may have a doping of the first conductivitytype (e.g. a p-type doping). For example, the first silicon sub-layermay be referred to as a p-doped or p-Si layer. The first siliconsub-layer of the first semiconductor layer structure may have a higherconcentration of acceptor doping atoms (e.g. group III atoms such asboron (B) atoms or aluminum (Al) atoms) than donor doping atoms (e.g.group V atoms such as phosphorus (P) atoms or arsenic (As) atoms). Thehigher concentration of acceptor doping atoms may result in the ap-doped silicon layer having a larger average hole concentration than anaverage electron concentration.

The first silicon sub-layer of the first semiconductor layer structuremay have an average (net) doping concentration of acceptor doping atomsof between 1×10¹³ cm⁻³ (e.g. 13 Ohm cm) to 1×10¹⁸ cm⁻³ (e.g. 0.04 Ohmcm) (or e.g. between 5×10¹³ cm⁻³ to 5×10¹⁷ cm⁻³ (e.g. 0.07 Ohm cm) ore.g. between 1×10¹⁵ cm⁻³ (e.g. 13 Ohm cm) to 1×10¹⁶ (e.g. 1.5 Ohm cm)),for example. The average doping concentration may be a number of dopingatoms per volume averaged over a region of interest of the semiconductorlayer (e.g. the first silicon sub-layer), for example.

The first silicon sub-layer of the first semiconductor layer structuremay have a thickness of between 50 nm and 2000 nm (or e.g. between 100nm and 1400 nm, or e.g. between 200 nm and 1000 nm), for example. Forexample, the first silicon sub-layer may have a thickness of about 1000nm.

Additionally, alternatively or optionally, the first semiconductor layerstructure 102 may further include a first (epitaxial or monocrystalline)silicon buffer sub-layer formed on the first silicon sub-layer. Thefirst silicon buffer sub-layer of the first semiconductor layerstructure may have a doping of a first conductivity type (e.g. may be ap-doped silicon layer). The first silicon buffer sub-layer may have anaverage (net) doping concentration of acceptor doping atoms of between1×10¹³ cm⁻³ to 1×10¹⁹ cm⁻³ (or e.g. between 1×10¹⁴ cm⁻³ to 1×10¹⁹ cm⁻³or e.g. between 1×10¹⁶ cm⁻³ to 1×10¹⁹ cm⁻³), for example. For example,the first silicon buffer sub-layer of the first semiconductor layerstructure may have an average doping concentration of about 5×10¹⁸ cm⁻³.Additionally or optionally, the first silicon buffer sub-layer may beomitted from the first semiconductor layer structure.

The first silicon sub-layer of the first semiconductor layer structuremay have a thickness of between 50 nm and 2000 nm (or e.g. between 100nm and 1400 nm, or e.g. between 200 nm and 1000 nm), for example. Forexample, the first silicon sub-layer may have a thickness of about 1000nm.

Optionally, the first silicon buffer sub-layer of the firstsemiconductor layer structure may be formed directly beneath orunderneath the plurality of quantum structures 101, for example. Inother words, the plurality of quantum structures 101 may be formed (orgrown) directly on the first silicon buffer sub-layer.

The first silicon buffer sub-layer of the first semiconductor layerstructure may be grown as a layer of improved crystallinity as comparedto the first silicon sub-layer of the first semiconductor layerstructure which may be commercial, for example.

Additionally or optionally, the first semiconductor layer structure mayfurther include a first intrinsic silicon sub-layer, a highly-dopedsilicon sub-layer and a seed sub-layer including silicon-germanium(Si—Ge) or silicon doped with antimony (Sb) or boron (B) formed betweenthe first silicon sub-layer and the plurality of quantum structures.

The first intrinsic silicon sub-layer of the first semiconductor layerstructure may be formed on (e.g. directly on) the first siliconsub-layer (if the first silicon buffer sub-layer is omitted), forexample. If the first silicon buffer sub-layer is included (e.g. formedon or directly on the first silicon sub-layer), then the first intrinsicsilicon sub-layer of the first semiconductor layer structure may beformed on (e.g. directly on) the first silicon buffer sub-layer.

The first intrinsic silicon sub-layer of the first semiconductor layerstructure may have a substantially equal number of donor atoms andacceptor atoms, for example. For example, the number of donor atoms maybe within 50% of the number of acceptor atoms, for example.

The first intrinsic silicon sub-layer of the first semiconductor layerstructure may have a thickness of between 50 nm and 2000 nm (or e.g.between 100 nm and 1400 nm, or e.g. between 200 nm and 1000 nm), forexample. For example, the first silicon sub-layer may have a thicknessof about 1000 nm.

Optionally, the first intrinsic silicon sub-layer of the firstsemiconductor layer structure may be formed directly beneath orunderneath the plurality of quantum structures 101, for example. Inother words, the plurality of quantum structures 101 may be formed (orgrown) directly on the first silicon buffer sub-layer of the firstsemiconductor layer structure.

Additionally or optionally, the first semiconductor layer structure mayfurther include a highly-doped silicon sub-layer formed between thefirst intrinsic silicon sub-layer and the plurality of quantumstructures. For example, the highly-doped silicon sub-layer of the firstsemiconductor layer structure may be formed on (e.g. directly on) thefirst intrinsic silicon sub-layer.

The highly-doped silicon sub-layer of the first semiconductor layerstructure may be a delta-doped silicon sub-layer, for example. Forexample, the delta-doped silicon sub-layer may have a concentration ofdopant atoms within a few atomic layers of the surface of thedelta-doped silicon sub-layer.

The highly-doped silicon sub-layer of the first semiconductor layerstructure (e.g. the delta-doped silicon sub-layer) may have a thicknessof about 5 nm to 10 nm, for example. The doping atoms of the delta-dopedsilicon sub-layer may be antimony or boron, for example.

The highly-doped silicon sub-layer of the first semiconductor layerstructure (e.g. the delta-doped silicon sub-layer) may have a sheet holeor electron density of between 1×10¹⁴ cm⁻² to 1×10¹⁶ cm⁻² (or e.g.between 5×10¹⁴ cm⁻² to 5×10¹⁵ cm⁻² or e.g. between 1×10¹⁵ cm⁻² to 5×10¹⁵cm⁻²), for example. For example, the highly-doped silicon sub-layer ofthe first semiconductor layer structure may have a sheet hole orelectron density of about 1×10¹⁶ cm⁻², for example.

Additionally or optionally, the first semiconductor layer structure mayfurther include a seed sub-layer including silicon-germanium or silicondoped with antimony or boron. The seed sub-layer may be formed betweenthe highly-doped silicon sub-layer and the plurality of quantumstructures, for example. For example, the seed sub-layer may be formedon (e.g. directly on) the highly-doped silicon sub-layer.

Optionally, the seed sub-layer of the first semiconductor layerstructure may be a silicon-germanium layer. For example, the seedsub-layer of the first semiconductor layer structure may be asilicon_(x)-germanium_(1-x) layer. x may lie between 0.25 and 0.35, forexample.

Alternatively, the seed sub-layer of the first semiconductor layerstructure may be an antimony (Sb)-doped silicon layer. Theantimony-doped silicon layer may have an average (net) dopingconcentration of Sb doping atoms of between 1×10¹⁵ cm⁻³ to 1×10¹⁹ cm⁻³(or e.g. between 1×10¹⁶ cm⁻³ to 1×10¹⁹ cm⁻³ or e.g. between 1×10¹⁷ cm³to 1×10¹⁹ cm⁻³), for example.

The seed sub-layer of the first semiconductor layer structure may have athickness of between 50 nm and 350 nm (or e.g. between 70 nm and 250 nm,or e.g. between 175 nm and 225 nm), for example. For example, the seedsub-layer may have a thickness of about 100 nm.

The semiconductor device may further include a second semiconductorlayer structure covering the plurality of quantum structures 101. Thesecond semiconductor layer structure may include a first siliconsub-layer.

The first silicon sub-layer of the second semiconductor layer structuremay have a doping of a second conductivity type (e.g. an n-type doping).For example, the first silicon sub-layer of the second semiconductorlayer structure may be referred to as a n-doped or n-Si layer.

The first silicon sub-layer of the second semiconductor layer structuremay have a higher concentration of donor doping atoms (e.g. group Vatoms such as phosphorus (P) atoms or arsenic (As) atoms) than acceptordoping atoms (e.g. group III atoms such as boron (B) atoms or aluminum(Al) atoms), for example. The higher concentration of donor doping atomsmay result in the n-doped silicon layer having a larger average electronconcentration than an average hole concentration.

The first silicon sub-layer may have an average (net) dopingconcentration of donor doping atoms of between 1×10¹⁵ cm⁻³ to 1×10¹⁹cm⁻³ (or e.g. between 1×10¹⁶ cm⁻³ to 1×10¹⁹ cm⁻³ or e.g. between 1×10¹⁷cm⁻³ to 1×10¹⁹ cm⁻³), for example. For example, the average (net) dopingconcentration of donor doping atoms may be about 5×10¹⁸ cm⁻³.

Alternatively, the first silicon sub-layer of the second semiconductorlayer structure may have a doping of the first conductivity type (e.g. ap-type doping). For example, the first silicon sub-layer may have anaverage (net) doping concentration of acceptor doping atoms of between1×10¹⁵ cm⁻³ to 1×10¹⁹ cm⁻³ (or e.g. between 1×10¹⁶ cm⁻³ to 1×10¹⁹ cm⁻³or e.g. between 1×10¹⁷ cm⁻³ to 1×10¹⁹ cm⁻³), for example. For example,the average (net) doping concentration of acceptor doping atoms may beabout 5×10¹⁸ cm⁻³.

The first silicon sub-layer of the second semiconductor layer structuremay have a thickness of between 50 nm and 500 nm (or e.g. between 100 nmand 400 nm, or e.g. between 200 nm and 300 nm), for example. Forexample, the first silicon sub-layer of the second semiconductor layerstructure may have a thickness of about 200 nm.

The second semiconductor layer structure may further include anintrinsic silicon spacer layer covering the plurality of quantumstructures 101. For example, the intrinsic silicon spacer layer may bearranged or formed between the plurality of quantum structures 101 andthe first silicon sub-layer of the second semiconductor layer structure.For example, the intrinsic silicon spacer layer may directly cover theplurality of quantum structures 101. For example, the intrinsic siliconspacer layer may directly contact and directly surround the plurality ofquantum structures 101. For example, the intrinsic silicon spacer layermay completely cover the plurality of quantum structures 101. Forexample, the intrinsic silicon spacer layer may be formed betweenneighboring quantum structures of the plurality of quantum structures101.

The intrinsic silicon spacer layer of the second semiconductor layerstructure may have a thickness of between 10 nm and 50 nm (or e.g.between 10 nm and 40 nm, or e.g. between 20 nm and 30 nm), for example.For example, the intrinsic silicon spacer layer of the secondsemiconductor layer structure may have a thickness of about 25 nm.

A tensile strain between the plurality of quantum structures, the firstsemiconductor layer structure and the intrinsic silicon spacer layer maylie between 1% and 4%, for example. Such a tensile strain may beintroduced by a forming the plurality of quantum structures 101 on astrained seed sub-layer of the first semiconductor layer structure. Forexample, the seed sub-layer of the first semiconductor layer structuremay be a strained silicon-germanium layer, for example.

FIG. 1B shows a schematic illustration of a further semiconductor device110 according to an embodiment.

The semiconductor device 110 includes a plurality of quantum structures101 formed on a first semiconductor layer structure 102. The quantumstructures of the plurality of quantum structures 101 have a lateraldimension of less than 15 nm. The plurality of quantum structuresinclude germanium and antimony. The plurality of quantum structures areconfigured to emit light with a light emission maximum at a wavelengthof between 5 μm and 7 μm or to absorb light with a light absorptionmaximum at a wavelength of between 5 μm and 7 μm.

Due to the quantum structures of the plurality of quantum structures 101having a lateral dimension of less than 15 nm, a semiconductor devicecapable of emitting or absorbing light at wavelengths of importance forsensing and chemical imaging may be achieved or improved, for example.For example, the semiconductor device may be capable of sensing andchemical imaging in the automotive industry, of environmental sensing infactories and buildings and of humidity sensing. Furthermore, thesemiconductor device may be capable of night vision, tomography oroptical and digital imaging, for example.

The semiconductor device 110 may be similar to the semiconductor devicedescribed with respect to FIG. 1A. For example, the semiconductor device110 may include one or more or all of the features described withrespect to the semiconductor device of FIG. 1A.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 1Bmay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIG. 1A) or below (e.g.FIGS. 1C to 7).

FIG. 1C shows a schematic illustration of a further semiconductor device120 according to an embodiment.

The semiconductor device 120 may include the first semiconductor layerstructure 102 formed on (e.g. directly on) the semiconductor substrate103. The first semiconductor layer structure 102 may include the firstsilicon sub-layer 104 arranged directly over the semiconductor substrate103. The first semiconductor layer structure 102 may include(optionally) the first silicon buffer sub-layer 105 arranged directlyover the first silicon sub-layer 104.

The semiconductor device 120 may include the plurality of quantumstructures 101 grown directly on the first silicon buffer sub-layer 105.The plurality of quantum structures 101 may be a plurality of quantumdots comprising predominantly germanium (Ge dots) formed in a layer onthe first silicon buffer sub-layer 105, for example.

The semiconductor device 120 may include the second semiconductor layerstructure 107 formed on the plurality of quantum structures 101. Thesecond semiconductor layer structure 107 may include the intrinsicsilicon spacer layer 106 covering the plurality of quantum structures101. The plurality of quantum structures 101 and the covering intrinsicsilicon spacer layer 106 may be referred to (collectively) as a quantumstructure layer stack 116 (or a i-Si/Ge QD layer).

The second semiconductor layer structure 107 may further include thefirst silicon sub-layer 108 of the second semiconductor layer structure.

Optionally, the first silicon sub-layer 104 of the first semiconductorlayer structure may have a doping of the first conductivity type (e.g. ap-type doping or p-Si) and the first silicon sub-layer 108 of the secondsemiconductor layer structure may have a doping of the secondconductivity type (e.g. a n-type doping or n-Si). In this case, thesemiconductor device (100, 110 or 120) may be a p-i-n device or have ap-i-n structure, for example.

Optionally or alternatively, the first silicon sub-layer 104 of thefirst semiconductor layer structure may have a doping of the firstconductivity type (e.g. a p-type doping) and the first silicon sub-layer108 of the second semiconductor layer structure may have a doping of thefirst conductivity type (e.g. a p-type doping). In this case, thesemiconductor device (100, 110 or 120) may be a p device or have a pstructure, for example.

Optionally or alternatively, the first silicon sub-layer 104 of thefirst semiconductor layer structure may have a doping of the secondconductivity type (e.g. an n-type doping). and the first siliconsub-layer 108 of the second semiconductor layer structure may have adoping of the second conductivity type (e.g. an n-type doping). In thiscase, the semiconductor device (100, 110 or 120) may be an n device orhave an n structure, for example.

The layer structure (e.g. the p-i-n structure, the p structure and the nstructure) may be a simple and easily implementable structure used inmid-infrared (MIR) sources and detectors employing Ge basednanostructures, for example.

Additionally, alternatively or optionally, the semiconductor device(100, 110 or 120) may include a first electrical contact structure 109in electrical contact with the first semiconductor layer structure 102,and a second electrical contact structure 111 in electrical contact withthe second semiconductor layer structure 107. FIG. 1C shows a layout ofthe semiconductor device with the germanium quantum dots, for example.

The plurality of quantum structures may be configured to emit light witha light emission maximum at a wavelength of between 5 μm and 7 μm or toabsorb light with a light absorption maximum at a wavelength of between5 μm and 7 μm based on a voltage applied to the first electrical contactstructure 109 and the second electrical contact structure 111. Forexample, the applied voltage applied to each of the first electricalcontact structure 109 and the second electrical contact structure 111may lie between 1 V and 10 V. Optionally, the voltage applied betweenthe first electrical contact structure 109 and the second electricalcontact structure 111 may lie between 1 V and 10 V, for example.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 1Cmay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIG. 1A to 1B) or below(e.g. FIGS. 1D to 7).

FIG. 1D shows a schematic illustration of a further semiconductor device130 according to an embodiment.

The semiconductor device 130 may be similar to the semiconductor devicesdescribed with respect to FIGS. 1A to 1C. For example, the semiconductordevice 130 may include one or more or all of the features described withrespect to the semiconductor device of FIGS. 1A to 1C.

The first semiconductor layer structure 102 may include the firstsilicon sub-layer 104. The first semiconductor layer structure 102 mayfurther include the first intrinsic silicon sub-layer 112 of the firstsemiconductor layer structure. The first semiconductor layer structure102 may further include the highly-doped silicon sub-layer 113. Thefirst semiconductor layer structure 102 may further include the seedsub-layer 114 including silicon-germanium or silicon doped with antimonyor boron.

The second semiconductor layer structure 107 may include the intrinsicsilicon spacer layer 106 covering the plurality of quantum structures101. The second semiconductor layer structure 107 may further includethe first silicon sub-layer 108 of the second semiconductor layerstructure. The second semiconductor layer structure 107 may furtherinclude a second intrinsic silicon spacer layer 115 arranged between thefirst silicon sub-layer 108 and the (first) intrinsic silicon spacerlayer 106, for example.

The semiconductor device 130 may include at least one quantum structurelayer stack 116 formed (repeatedly) over the first semiconductor layerstructure 102. For example, the at least one quantum structure layerstack 116 may be formed directly on the first silicon buffer sub-layer105 of the first semiconductor layer structure 102 or directly on thefirst silicon sub-layer 104 of the first semiconductor layer structure102, or directly on the first intrinsic silicon sub-layer 112 of thefirst semiconductor layer structure 102, for example.

A (or each) quantum structure layer stack 116 (of a plurality of quantumstructure layer stacks) may include at least the intrinsic siliconspacer layer 106 and the plurality of quantum structures 101. The topmost intrinsic silicon spacer layer 106 covering the plurality ofquantum structures 101 may be referred to as a silicon cap layer 106(cap).

Optionally, a (or each) quantum structure layer stack of the pluralityof quantum structure layer stacks 116 may further include thehighly-doped silicon sub-layer 113 of the first semiconductor layerstructure, the seed sub-layer 114 of the first semiconductor layerstructure and the second intrinsic silicon spacer layer 115 of thesecond semiconductor layer structure.

In the quantum structure layer stack, the seed sub-layer 114 of thefirst semiconductor layer structure may be arranged on (e.g. directlyon) the highly-doped silicon sub-layer 113, for example. The pluralityof quantum structures 101 may be arranged on (e.g. directly on) the seedsub-layer 114 of the first semiconductor layer structure, for example.The intrinsic silicon spacer layer 106 may cover the plurality ofquantum structures 101 grown on the seed sub-layer 114 of the firstsemiconductor layer structure, for example. Optionally, the secondintrinsic silicon spacer layer 115 of the second semiconductor layerstructure may be arranged directly on the (first) intrinsic siliconspacer layer 106 of the second semiconductor layer structure.

Optionally, the highly-doped silicon sub-layer 113 of the firstsemiconductor layer structure may be arranged on (e.g. directly on) thefirst intrinsic silicon sub-layer 112 of the first semiconductor layerstructure.

Optionally, the highly doped silicon sub-layer 113 and the seedsub-layer 114 of the first semiconductor layer structure 102 may be partof a silicon-on-insulator (SOI) layer stack of (or on) the semiconductorsubstrate 103. For example, the SOI layer stack may include an insulatorlayer (e.g. a silicon dioxide layer) formed below the highly dopedsilicon sub-layer 113, for example. In this case of an SOI structure,the first intrinsic sub-layer 112 of the first semiconductor layerstructure 102 and the first silicon buffer sub-layer 105 of the firstsemiconductor layer structure 102 may be optionally omitted, forexample.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 1Dmay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 1C) or below(e.g. FIGS. 1E to 7).

FIG. 1E shows a schematic illustration of a further semiconductor device140 comprising a plurality of quantum structure layer stacks accordingto an embodiment.

The semiconductor device 140 may be similar to the semiconductor devicesdescribed with respect to FIGS. 1A to 1D. For example, the semiconductordevice 140 may include one or more or all of the features described withrespect to the semiconductor device of FIGS. 1A to 1D.

The semiconductor device 140 may include a plurality of quantumstructure layer stacks 116 a, 116 b formed repeatedly (e.g.progressively stacked or e.g. one layer stack formed over another layerstack) over the first semiconductor layer structure 102. For example,the plurality of quantum structure layer stacks 116 may be formeddirectly on the first silicon buffer sub-layer 105.

The semiconductor device 140 may include more than one quantum structurelayer stack, for example. The semiconductor device 140 may includebetween 10 to 100 quantum structure layer stacks (or e.g. between 20 to80 quantum structure layer stacks or e.g. between 30 to 60 quantumstructure layer stacks), for example.

The several (or plurality of) layers of Ge quantum dots may increase theintensity of the emission of light (by an emitter comprising thesemiconductor device) or absorption of light (from a detector comprisingthe semiconductor device), for example.

The semiconductor device 140 may be a p-i-n structure, a p-structure oran n-structure, for example.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 1Emay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 1D) or below(e.g. FIGS. 2A to 7).

FIG. 2A shows a flow chart of a method 200 for forming a semiconductordevice according to an embodiment.

The method 200 includes forming 210 a plurality of quantum structuresincluding predominantly germanium on a first semiconductor layerstructure. The quantum structures of the plurality of quantum structureshave a lateral dimension of less than 15 nm and an area density of atleast 1×10¹⁰ quantum structures per cm². The plurality of quantumstructures are configured to emit light with a light emission maximum ata wavelength of between 2 μm and 10 μm or to absorb light with a lightabsorption maximum at a wavelength of between 2 μm and 10 μm. Theplurality of quantum structures are grown at least by using low pressurechemical vapor deposition.

Due to using low pressure chemical vapor deposition to form theplurality of quantum structures 101 having a lateral dimension of lessthan 15 nm and an area density of at least 1×10¹⁰ quantum structures percm², a semiconductor device capable of emitting or absorbing light atwavelengths of importance for sensing and chemical imaging may beachieved or improved, for example.

The method 200 may further include forming 210 a first semiconductorlayer structure before forming the plurality of quantum structures. Thefirst silicon sub-layer of the first semiconductor structure may beformed on the semiconductor substrate (e.g. a Si substrate or e.g. aSi₃N₄ substrate). For example, the first silicon sub-layer may be ann-type epitaxial or monocrystalline layer doped with phosphor atoms,arsenic atoms or antimony atoms. This layer may serve as or be a powersupply layer for the Ge quantum dot structures.

The plurality of quantum structures may be grown at least by using lowpressure chemical vapor deposition (LPCVD), for example. The pluralityof quantum structures (e.g. the Ge quantum dot structures) may be grownin a LPCVD reactor, for example. Therefore, an area density of at least1×10¹⁰ quantum structures per cm² (or at least 8×10¹¹ quantum structuresper cm²) may be achieved. These high densities of quantum structures maybe achieved by using chemical vapor deposition for growth, for example.Other growth methods (e.g. molecular beam epitaxy) may achieve lowerdensities (e.g. between 1×10⁸ or 2×10⁸ quantum structures per cm² to3×10¹¹ or 4×10¹¹ quantum structures per cm²). The density may be madeintentionally much lower than 1×10⁸ or 2×10⁸ quantum structures per cm²(e.g. for ordered arrays of Ge quantum dots or for low density growth).These higher densities (e.g. above 3×10¹¹ or 4×10¹¹ quantum structuresper cm²) may be achieved when chemical vapor deposition is used forgrowth.

The method 200 may include providing a gaseous germanium precursor at asurface of the first semiconductor layer structure at a temperature ofbetween 550° to 700° to form the plurality of quantum structures (e.g.in an LPCVD process). The germanium precursor may include GeH₄ orgermanium tetrachloride (GeCl4) in Hydrogen carrier gas. The germaniumprecursor may be passed or conducted over the wafer (or over the firstsemiconductor layer structure) at a low pressure of under 30 Torr.

The method 200 may include subsequently (a process without separation)providing hydrogen gas so that the deposited germanium may form or beredistributed to isolated germanium crystallites (e.g. quantum dotscomprising predominantly germanium) with a diameter (or lateraldimension) of between 5 nm and 20 nm (or e.g. less than 15 nm), forexample.

The method 200 may further (optionally) include forming a layer ofantimony on a plurality of germanium structures (e.g. the germaniumcrystallites) after providing the gaseous germanium precursor, andheating the plurality of germanium structures (to a temperature between100° to 200°, so that the antimony interdiffuses with the germanium toform the plurality of quantum structures. The layer of antimony may havea thickness of less than 5 nm, for example.

The plurality of quantum structures formed may be self-assembled quantumstructures and may have the area density of at least 8×10¹¹ quantumstructures per cm². The quantum structures may be homogenous in size.For example, 80 to 90% of the quantum structures may have a lateraldimension which lies between 10 nm and 15 nm.

The method 200 may include subsequently (in a following process step)forming the intrinsic silicon spacer layer of the second semiconductorlayer structure to cover the plurality of quantum structures. Forexample, the crystallites of germanium may be covered with silicon (e.g.the first intrinsic silicon spacer layer of the second semiconductorlayer structure). To form the first intrinsic silicon spacer layer ofthe second semiconductor layer structure, a silicon precursor such assilane (SiH₄), disilane (Si₂H₆) or dichlorsilane (SiH₂Cl₂) in a hydrogencarrier gas may be applied or provided. The temperature may be similarto the temperature provided for growing the germanium crystallites, forexample. For example, the temperature may be between 550° to 700°. Thepressure may lie between 10 and 200 Torr, for example.

The layer thickness of the silicon layer (e.g. the thickness of thefirst intrinsic silicon spacer layer of the second semiconductor layerstructure) may (or should) provide a sufficient quantum mechanicalcoupling with the plurality of quantum structures (e.g. the quantum dotscomprising predominantly germanium), and lies in the range of thediameter (or lateral dimension of the germanium crystallites.

The process (of forming a quantum structure layer stack including atleast the plurality of quantum structures and the first intrinsicsilicon spacer layer of the second semiconductor layer structure) may berepeated periodically so that at least one (e.g. one or more) furtherdepositions of germanium quantum dots and the covering silicon layer maybe carried out. The process may be repeated until a sufficient oracceptable number of quantum structure layer stacks layers are formed orarranged over each other, For example, until a sufficient emission ofinfrared light or a sufficient sensitivity of a detector can beachieved.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 2Amay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 1D) or below(e.g. FIGS. 2B to 7).

FIG. 2B shows a schematic illustration 230 of forming part of a firstsemiconductor layer structure on the semiconductor substrate 103 (asdescribed in 210), for example. For example, the first silicon sub-layer104 of the first semiconductor layer structure may be an n-typeepitaxial or monocrystalline layer doped with phosphor atoms, arsenicatoms or antimony atoms. Silicon oxide (SiOx) or Tetraethylorthosilicate (TEOS) may (or must) be completely canceled out (e.g.removed) due to the absorption losses, for example.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 2Bmay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 2A) or below(e.g. FIGS. 2C to 7).

FIG. 2C shows a schematic illustration 240 of (subsequently) forming atleast one (e.g. a plurality) quantum structure layer stack comprising aplurality of quantum structures 101 (quantum dots comprisingpredominantly germanium), and further forming the covering intrinsicsilicon spacer layer 106 over the plurality of quantum structures 101.The plurality of quantum structure layer stacks may be formed on thefirst silicon sub-layer 104 of the first semiconductor layer structure,which may be formed on the semiconductor substrate 103, for example.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 2Cmay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 2B) or below(e.g. FIGS. 2D to 7).

FIG. 2D shows a schematic illustration 250 of (subsequently) forming thefirst silicon sub-layer 108 of the second semiconductor layer structureover the at least one quantum structure layer stack 116 comprising theintrinsic silicon spacer layer 106 and the plurality of quantumstructures 101. The schematic illustration shows the growth of the layerstructure, for example.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 2Dmay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 2C) or below(e.g. FIGS. 2E to 7).

FIG. 2E shows a schematic illustration 260 of device processing, (e.g.lithography, etching or metallization) to form a semiconductor deviceincluding the at least one quantum structure layer stack 116. Deviceprocessing may include structuring or shaping the layers of thesemiconductor device (e.g. the first silicon buffer sub-layer 105, theintrinsic silicon spacer layer 106 and the first silicon sub-layer 108).Furthermore, electrical contacts may be formed on exposed regions of thefirst semiconductor layer structure 102 and on the second semiconductorlayer structure 107, for example.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 2Emay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 2D) or below(e.g. FIGS. 3A to 7).

FIG. 3A shows a schematic illustration of a further semiconductor device300 according to an embodiment.

The semiconductor device 300 includes a quantum well layer stack 331.The quantum well layer stack 331 includes a plurality of first quantumwell layers 332 and a plurality of second quantum well layers 333. Thefirst quantum well layers of the plurality of first quantum well layers332 and the second quantum well layers of the plurality of secondquantum well layers 333 are arranged alternatingly on a firstsemiconductor layer structure 302. The first quantum well layers of theplurality of first quantum well layers 332 include silicon-germanium andthe second quantum well layers of the plurality of second quantum welllayers 333 include silicon. The first quantum well layers of theplurality of first quantum well layers 332 and the second quantum welllayers of the plurality of second quantum well layers 333 have athickness of below 100 nm. The quantum well layer stack 331 isconfigured to emit light with a light emission maximum at a wavelengthof between 2 μm and 10 μm or to absorb light with a light absorptionmaximum at a wavelength of between 2 μm and 10 μm.

Due to the quantum well layer stack 331 being configured to emit lightwith a light emission maximum at a wavelength of between 2 μm and 10 μmor to absorb light with a light absorption maximum at a wavelength ofbetween 2 μm and 10 μm, a semiconductor device capable of emitting orabsorbing light at wavelengths of importance for sensing and chemicalimaging may be achieved or improved, for example. For example, thesemiconductor device 300 may be capable of sensing and chemical imagingin the automotive industry, of environmental sensing in factories andbuildings and of humidity sensing. Furthermore, the semiconductor device300 may be capable of night vision, tomography or optical and digitalimaging, for example.

A (or each) first quantum well layer of the plurality of first quantumwell layers 332 may include silicon_(x)-germanium_(1-x). x may liebetween 0.25 and 0.35, for example. A (or each) second quantum welllayer of the plurality of second quantum well layers 333 may includeintrinsic silicon, for example.

A (or each) first quantum well layer of the plurality of first quantumwell layers 332 may have a thickness which lies between 1 nm and 100 nm(or e.g. between 1 nm and 10 nm), for example (e.g. 5 nm). A (or each)second quantum well layer of the plurality of second quantum well layers333 may have a thickness which lies between 1 nm and 100 (or e.g.between 1 nm and 10 nm), for example (e.g. 5 nm). The thickness may bechosen in order to operate in the MIR range.

The quantum well layer stack 331 may include at least alternatinglyarranged first quantum well layers 332 and second quantum well layers333 (e.g. alternating Si and SiGe layers). For example, a second quantumwell layer 333 may be arranged between consecutive first quantum welllayers 332, and a first quantum well layer 332 may be arranged betweenconsecutive second quantum well layers 333. The quantum well layer stack331 may include at least three first quantum well layers and at leastthree second quantum well layers (e.g. at least 3 or 4 layers of Gequantum wells).

The first semiconductor layer structure 302 may be similar to the firstsemiconductor layer structure 102, for example. For example, the firstsemiconductor layer structure 302 may include one or more or all of thefeatures or layers described with respect to the first semiconductorlayer structure 102.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 3Amay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 2E) or below(e.g. FIGS. 3B to 7).

FIG. 3B shows a schematic illustration of a further semiconductor device310 comprising a quantum well layer stack according to an embodiment.

The first semiconductor layer structure 302 may include one or more orall of the features or layers (e.g. the first silicon sub-layer 104 andoptionally the first silicon buffer sub-layer 105) arranged on thesemiconductor substrate 103.

The semiconductor device 310 may further include a second semiconductorlayer structure 307 covering the quantum well layer stack 331. Thesecond semiconductor layer structure 307 may include a first siliconsub-layer 108 formed on the quantum well layer stack 331, for example.

The second semiconductor layer structure 307 of semiconductor device 310may be similar to the second semiconductor layer structure 107. Forexample, second semiconductor layer structure 307 may include one ormore features described with respect to the second semiconductor layerstructure 107.

The semiconductor device 310 may include a first electrical contactstructure in electrical contact with the first semiconductor layerstructure 302 (e.g. in electrical contact with a first silicon sub-layer104 of the first semiconductor layer structure), and a second electricalcontact structure in electrical contact with the second semiconductorlayer structure 307 (e.g. in electrical contact with a first siliconsub-layer 108 of the second semiconductor layer structure).

The plurality of first quantum well layers 332 and the plurality ofsecond quantum well layers 332 may be arranged (alternatingly) betweenthe first semiconductor layer structure 302 and the second semiconductorlayer structure 307, for example.

The quantum well layer stack 331 may be configured to emit light with alight emission maximum at a wavelength of between 2 μm and 10 μm (ore.g. between 5 μm and 7 μm) or to absorb light with a light absorptionmaximum at a wavelength of between 2 μm and 10 μm (or e.g. between 5 μmand 7 μm) based on a voltage applied to the first electrical contact andthe second electrical contact, wherein the applied voltage lies between1 V and 10 V, for example. Optionally, the voltage applied between thefirst electrical contact structure 109 and the second electrical contactstructure 111 may lie between 1 V and 10 V, for example.

Additionally or optionally, tuning of the wavelength of the emission oflight (of a source or emitter) or absorption of light (of a detector)may be done by varying (or controlling) a thickness of the first quantumwell layer and a thickness of the second quantum well layer.Additionally or optionally, the applied voltage to a first electricalcontact structure and a second electrical contact structure (e.g. to thep and/or n contacts) may be varied to control or tune the emission orabsorption wavelength. Additionally or optionally, the content ofsilicon of the silicon-germanium layer (x) may be varied during growth.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 3Bmay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 3A) or below(e.g. FIGS. 3C to 7).

FIG. 3C shows a schematic illustration of part of the quantum well layerstack 320 of the semiconductor device.

The quantum well layer stack 320 includes the first quantum well layer332 (e.g. silicon_(x)-germanium_(1-x) and the second quantum well layer333 (e.g. Si), for example.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 3Cmay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 3B) or below(e.g. FIGS. 4 to 7).

FIG. 4 shows a flow chart of a method 400 for forming a semiconductordevice according to an embodiment.

The method 400 includes forming 420 a quantum well layer stackcomprising a plurality of first quantum well layers and a plurality ofsecond quantum well layers. The first quantum well layers of theplurality of first quantum well layers and the second quantum welllayers of the plurality of second quantum well layers are arrangedalternatingly on a semiconductor layer structure. The first quantum welllayers of the plurality of first quantum well layers comprisesilicon-germanium and the second quantum well layers of the plurality ofsecond quantum well layers comprise silicon. The first quantum welllayers of the plurality of first quantum well layers and the secondquantum well layers of the plurality of second quantum well layers havea thickness of below 100 nm. The quantum well layer stack is configuredto emit light with a light emission maximum at a wavelength of between 2μm and 10 μm or to absorb light with a light absorption maximum at awavelength of between 2 μm and 10 μm.

By forming the quantum well layer stack comprising the plurality offirst quantum well layers and the plurality of second quantum welllayers, a semiconductor device capable of emitting or absorbing light atwavelengths of importance for sensing and chemical imaging may beachieved or improved, for example.

The method 400 may further include forming 410 a first semiconductorlayer structure before forming the quantum well layer stack, forexample.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 4may comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 3B) or below(e.g. FIGS. 5A to 7).

FIG. 5A shows a schematic illustration of a detection system 500according to an embodiment.

The detection system 500 includes an emitter device 510 and a detectordevice 520. The emitter device 510 and the detector device 520 arearranged so that light emitted 591 by the emitter device 510 interactswith a substance 592 to be detected by the detector device 520 beforereaching the detector device 520.

The emitter device 510 includes a semiconductor device described inconnection with FIGS. 1A to 4, for example. For example, the emitterdevice 510 includes the plurality of quantum structures or quantum welllayer stack comprising quantum well layers. The emitter device 510 maybe a MIR source, configured to emit light with a light emission maximumat a wavelength of between 2 μm and 10 μm (or e.g. between 5 μm and 7μm), for example.

The detector device 520 includes a semiconductor device described above,for example. For example, the emitter device 520 includes the pluralityof quantum structures or quantum well layer stack comprising quantumwell layers. The detector device 520 may be a MIR detector, configuredto absorb light with a light absorption maximum at a wavelength ofbetween 2 μm and 10 μm (or e.g. between 5 μm and 7 μm), for example.

The light emitted by the emitter device may interact with the substance592 to be detected in an interaction volume or interaction space whichlies between the emitter device 510 and the detector device 520, forexample. The interaction volume may include or be a waveguide, aphotonic crystal or a resonator structure, for example.

The detection system 500 may include or be a sensor for detecting carbondioxide or machine oil, for example. The detection system 500 mayinclude or be a night vision device, a tomography device, a digitalimaging device or an optical imaging device, for example.

A MIR source and a MIR detector based on Ge or SiGe quantum dots and Geor SiGe quantum wells may be referred to generally as Si/Genanostructures.

The source (e.g. the emitter device 510) and the detector (e.g. thedetector device 520) may be fabricated from Si/Ge, which may allow fortheir full integration on a Si chip along with other Si/Ge basedcomponents, for example. In addition, the two components (source anddetector) may be fully processed by Si technology. The Ge quantum dotsand Ge quantum wells may be fabricated or grown by chemical vapordeposition (CVD), for example. The technique of CVD allows for highthroughput at the required quality towards the structures, for example.The structures following after the growth may be fabricated by processessuch as deep-UV lithography, chemical or reactive ion etching (RIE),and/or metal deposition. Thus, the entire detection system (e.g. whichmay include the source, a waveguide or photonic crystal PhC and adetector may be fabricated. The process flow for the device fabricationmay be established on 200 mm-Si-wafer processes. The Si/Genanostructures may be made by selected growth at appropriate places onthe Si wafer.

For example, the Si/Ge nanostructures may form a MIR source, which emitslight at λ=4.26 μm, which coincides with the absorption peak of CO₂. TheMIR detector, formed also from Si/Ge nanostructures may absorb lightwith peak sensitivity of the detector at λ=4.26 μm. The MIR source andthe MIR detector may be placed on a Si chip along with a photoniccrystal (PhC) structure between them. The three components (the MIRsource, PhC and detector) may form a detection system (e.g. a sensor forCO2 sensing and detection), for example.

For example, the Si/Ge nanostructures may form a MIR source, which emitslight at a longer wavelength of λ=6.25 μm, which coincides with theabsorption peak of machine oil. The MIR detector, formed also from Si/Genanostructures, absorbs light with peak sensitivity of the detector atλ=6.25 μm. The MIR source and the MIR detector may be placed on a Sichip along with a waveguide (e.g. photonic crystal (PhC) structure)between them. The three components (the MIR source, PhC and detector)may form a detection system (e.g. a sensor for oil sensing anddetection).

The excitation of the SiGe nanostructures, which makes them emit light,may be done optically by an excitation light beam (e.g. from a laserdiode) or electrically (e.g. by application of a bias). For the opticalexcitation of the SiGe nanostructures in the emitter part, a gratingstructure may be designed on the surface of the structure, where the Gequantum dots or Ge quantum wells reside, for example.

For the electrical excitation of the SiGe nanostructures in thesemiconductor of the emitter device 510, the nanostructures may be grownin a p-n, a p-i-n or a p-junction, for example. Then, the bias to thestructures may be applied via metal contacts to the junction, forexample.

Developing a MIR source and a mid-infrared detector, which arecompatible with the Si-based technology, may be of importance not onlyfrom the point of view of fundamental physics, but also from the pointof view of numerous applications, particularly for optoelectronic andphotonic devices.

An obstacle for development of such a source and detector is theindirect electronic band gap of bulk Si (silicon) and bulk Ge(germanium), which may make them inefficient emitter and detector oflight. Recent progress of nanotechnology may allow the indirect natureof the band gap to be overcome and efficient emission and absorption oflight may be achieved. This may be carried out by scaling down the Siand Ge and the designing of nanostructures, namely quantum dots (QDs)and quantum wells (QWs).

Although demonstrations may be manifested as laboratory concepts,commercially available MIR source and MIR detector based on Si/Ge areabsent, and may not perform at the desired wavelengths. The devices maybe fabricated by molecular beam lithography (MBE) (although they are notnecessarily appropriate for the industry due to high costs and lowthroughput. The wavelengths of operation of some MIR sources and MIRdetectors may fall below the wavelength λ=4.26 μm and the spectral rangeλ=5 μm to 7 μm.

The wavelength λ=4.26 μm may be used for detection carbon dioxide CO₂ asthe gaseous phase of CO₂ possesses a high absorption peak exactly atthis wavelength.

The spectral range of λ=5 to 7 μm may be used to detect severalimportant liquids, which possess high absorption peaks in this range.For example, machine oil has peaks at λ=5.75 μm and λ=6.25 μm. Brakefluid and acetone has a peak at approximately λ=5.8 μm. Methanol has astrong peak at λ=6.9 μm although strongest peaks at λ=3 μm, λ=3.4 μm,λ=3.53 and λ=9.7 μm. Trichloroethylene has a peak at λ=6.31 μm. Waterhas a peak at λ=6.1 μm.

The wavelengths from λ=4 μm to 7 μm may be of importance for sensing andchemical imaging in the automotive industry (oil and brake leakssensing), in environmental sensing in factories and building (acetone,methanol, trichloroethylene evaporations control and CO2 monitoring), orin humidity sensing, for example. In addition, these MIR wavelengths maybe used in applications in night vision, in tomography (e.g. opticaldiffusion tomography ODT), in invisible fences, or in optical anddigital imaging (e.g. Si/Ge based CCD detectors), for example.

The detection system 500 may include or may be (but is not limited tothese areas and devices), a MIR sensor for detection and sensing of CO₂.Alternatively or optionally, the detection system may include or may bea MIR sensor for detection and sensing of liquids. Alternatively oroptionally, the detection system 500 may include emitters and detectorsfor night vision applications. Alternatively or optionally, thedetection system may include emitters and detectors for tomographyapplications. Alternatively or optionally, the detection system 500 mayinclude emitters and detectors for invisible fences and alarms.Alternatively or optionally, the detection system 500 may includeemitters and detectors for digital and optical imaging.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 5Amay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 4) or below(e.g. FIGS. 5B to 7).

FIG. 5B shows a schematic illustration of a further detection system 530according to an embodiment.

The emitter device 510 may be formed in an input taper region of adetection system, for example. For example, the Si/Ge nanostructures(quantum structures) may be formed in the input taper regions.

The detector device 520 may be formed in an output taper region of adetection system 530, for example. For example, the Si/Ge nanostructures(quantum structures) may be formed in the output taper regions. Lightemission from the emitter device 510 may be coupled from the emitterdevice 510 to the detector device 520 (e.g. by a waveguide 541), andsubsequently detected by the detector device 520, for example.

Optionally, the first electrical contact structure and the secondelectrical contact structure of the semiconductor device of the emitterdevice may be omitted. Optionally, a light source 542 (e.g. a laserbeam) may be used to excite the quantum structures or quantum wells toemit light with a light emission maximum at a wavelength of between 2 μmand 10 μm (or e.g. between 5 μm and 7 μm), for example.

FIG. 5B shows the optical mean of the excitation of the Si/Genanostructures. The nanostructures are in the taper regions in the inputand the output. This may allow easier connections of the metal contacts(e.g. the first electrical contact structure 109 and the secondelectrical contact structure 111), and a larger amount (or number) of Gequantum dots or Ge quantum wells can be placed in the taper (which mayincrease emission and absorption intensity), for example. The outputfrom the detector device 520 at the output may be an electrical signalwhich may be measured by the first electrical contact structure 109 andthe second electrical contact structure 111, for example.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 5Bmay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 5A) or below(e.g. FIGS. 5C to 7).

FIG. 5C shows a schematic illustration of a further detection system 540according to an embodiment.

In the detection system 540, the first electrical contact structure 109and the second electrical contact structure 111 of the semiconductordevice of the emitter device 510 may be included, so that an appliedvoltage at or between the first electrical contact structure 109 and thesecond electrical contact structure 111 causes the semiconductor deviceof the emitter device 510 to emit light with a light emission maximum ata wavelength of between 5 μm and 7 μm.

FIG. 5C shows the electrical mean of the excitation of the Si/Genanostructures by (applied voltage) bias, for example. The output fromthe detector at the output is an electrical signal, for example.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 5Cmay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 5B) or below(e.g. FIGS. 5D to 7).

FIG. 5D shows a schematic illustration of a further detection device 550according to an embodiment.

The detection device 550 may be similar to the detection device of FIG.5A to 5C. Additionally, the detection device 550 may include a resonatorstructure 551 (e.g. a single-ring resonator structure coupled to thewaveguide 541). The ring resonator 551 may act as an amplifier of theintensity of the emission from the Si/Ge nanostructures (e.g. from thequantum structures or quantum well layer stack of the emitter device510, for example. It may also increase the sensitivity of the sensor, incase the device is fabricated as a sensor, for example.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 5Dmay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 5C) or below(e.g. FIGS. 5E to 7).

FIG. 5E shows a schematic illustration of a detection system 560comprising a sensor according to an embodiment.

The detection system 560 may include the emitter device 510, thedetector device 520. The interaction volume may be a one-dimensional(1D) photonic crystal, for example. The quantum structures or quantumwell layers of the emitter device 510 may be excited by a light beam orby an applied bias. Light emitted by the emitter device 510 interactswith the substance to be detected (CO₂ denoted by the curved errors) bythe detector device 520 before reaching the detector device 520. Thedetector device 520 absorbs the light after interaction with thesubstance. The (absorbed light) or output from the detector device 520may be measured as an electrical signal, via metal electrical contactstructures (e.g. indium tin oxide ITO contacts), for example. Thedetection system 560 may be a CO₂ sensor, for example.

The emitter device 510 may be based on Si/Ge nanostructures may providehigh emission intensity. The required emission intensity may varydepending on the application, for example. The detector device 520 basedon Si/Ge nanostructures may provide high detectivity and/orresponsivity. The required detectivity and/or responsivity may varydepending on the application. For a sensor (detection) device, whichincorporates the emitter device, an interaction volume and the detectordevice, the detection device may have a high sensitivity, which may alsovary depending on its application.

In order to increase the sensitivity of the device (e.g. sensor), theinteraction volume may include a resonator structure, which may increasethe interaction between the light and the sensed substance or fluid(liquid or gas). The resonator structure may be incorporated in order toamplify the intensity of the emission from the emitter. A filter, forinstance in a the form of a 1D or (two-dimensional) 2D PhC 561, may beincorporated adjacent to the emitter in order to filter out the unwantedpart of the emission spectra from the emitter. Additionally,alternatively or optionally, for the case of a sensor, the interactionvolume may be designed as a 1D or 2D PhC (or 1D or 2D PhC resonator) inorder to filter out the unwanted part of the emission spectra from theemitter. Additionally, alternatively or optionally, a current amplifiermay be realized adjacent to the detector to amplify the signal outputfrom the detector. In addition, a multiple number (e.g. a plurality) ofstructures may be fabricated on a single chip in order to further boostthe performance of the device.

The detection system 560 and semiconductor devices may be formed atleast by fabrication, characterization and optimization of the Si/Genanostructures, device fabrication and device characterization, forexample.

For the semiconductor devices and detection systems described herein,the plurality of quantum structures may be configured to emit light orabsorb light at a wavelength (λ) of between 5 μm and 7 μm (e.g. at 4.2μm or 6.2 μm) by varying the size of the quantum structures (dots) up to15 nm. Additionally or optionally, the doping of the quantum structures(dots) may be varied (e.g. by varying a doping concentration of antimonyatoms), for example. For example, the doping may be used to change thesize of the quantum dots and to modify the band gap of the quantum dots,for example. Additionally or optionally, the doping may be used tocreate intermediate electron or hole states. Additionally or optionally,the tensile or crystallographic strain between the layer of germaniumquantum dots and the layer beneath them and the cap layer above them,may be varied so that the plurality of quantum structures emit light orabsorb light at a wavelength (λ) of between 5 μm and 7 μm (e.g. at 4.2μm or 6.2 μm).

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 5Emay comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 5D) or below(e.g. FIGS. 6 to 7).

FIG. 6 shows a schematic illustration of the band structure 600 of Ge,Si, Ge quantum dots for hole transitions in the valence band. Si and Gehave an indirect band structure. For Si, 6Emin at

$K_{0} = {0.85\mspace{14mu} {\frac{2\pi}{a}.}}$

The indirect bandgap is E_(gap)=1.17 eV at T=0° and is E_(gap)=1.12 eVat T=300°. For Ge, E_(gap)=0.66 eV, E_(Δ)=0.85 eV, E_(Γ1)=0.8 eV,E_(Γ2)=3.2 eV and E_(SO)=0.29 eV at T=300°.

Hole transitions may occur in the valance bands between bands A and B,for example. The hole transitions may occur at different positions ofthe k-vector value (e.g. not necessarily at the Γ point) by applying theexternal bias, for example.

Crystallographic strain may be used to obtain band modifications inorder to achieve the required MIR transitions across the band gap or thehole transitions in the valence band. For example, the band structure ofGe and/or Si may be modified by the use of crystallographic strain (whengrowing Ge on Si or vice versa). For example, relaxed bulk Ge has anindirect bandgap of 0.664 eV at the L valley and a direct bandgap of0.800 eV at the F valley. Tensile strained intrinsic Germanium (i-Ge)may have band modifications, e.g. in the valence band. For example, thedirect and indirect bandgap may be reduced. For example, the bandgapbetween a light holes band maximum and conduction band minimum may bereduced and the bandgap between a heavy holes band maximum andconduction band minimum may be reduced. For bulk germanium, duringcarrier injection injected electrons and injected holes may recombineinefficiently via the indirect bandgap. By n-type doping of germanium(e.g. n+ doping of Ge), extrinsic electrons may fill the L valleys. Fortensile strained n+ Ge, the injected electrons may be directed into thedirect F valley to recombine with the injected holes, resulting inefficient direct gap light emission. The doping may achieved severaltransitions across the band gap.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 6may comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 5E) or below(FIG. 7).

FIG. 7 shows a schematic illustration of a fluid sensor 700 according toan embodiment.

The fluid sensor 700 comprises a detector 720. The detector 720comprises a processing module 790 configured to generate a detectionsignal 793 based on light 591 emitted by an emitter 710 and propagatedthrough a fluid. The detector 720 or the emitter 710 comprises aplurality of quantum structures 101 comprising predominantly germanium.The plurality of quantum structures are formed on a first semiconductorlayer structure 102. The quantum structures of the plurality of quantumstructures 101 have a lateral dimension of less than 15 nm and an areadensity of at least 1×10¹⁰ quantum structures per cm². The plurality ofquantum structures 101 are configured to emit light with a lightemission maximum at a wavelength of between 2 μm and 10 μm or to absorblight with a light absorption maximum at a wavelength of between 2 μmand 10 μm.

Due to the fluid sensor 700 having a plurality of quantum structures 101being configured to emit light with a light emission maximum at awavelength of between 2 μm and 10 μm or to absorb light with a lightabsorption maximum at a wavelength of between 2 μm and 10 μm, efficientfluid sensors capable of detecting liquids or gases such as carbondioxide or liquids may be obtained.

The detection signal 793 generated by the processing module may be asignal (e.g. an electrical signal) carrying information related to thetype or concentration of the gas or liquid, for example.

The fluid sensor 700 may be similar to the detection systems describedin connection with FIGS. 5A to 5E. Furthermore, the emitter and thedetector of the fluid sensor 700 may be similar to the emitters anddetectors described in connection with FIGS. 1A to 6. The fluid sensor700 may be a fluid sensor for detecting carbon dioxide gas, for example.

More details and aspects are mentioned in connection with theembodiments described above or below. The embodiments shown in FIG. 7may comprise one or more optional additional features corresponding toone or more aspects mentioned in connection with the proposed concept orone or more embodiments described above (e.g. FIGS. 1A to 6) or below.

Aspects and features (e.g. the plurality of quantum structures, thefirst semiconductor layer structure, the second semiconductor layerstructure, the first silicon sub-layer of the first semiconductor layerstructure, the first silicon buffer sub-layer of the first semiconductorlayer structure, the first intrinsic silicon sub-layer of the firstsemiconductor layer structure, the highly-doped silicon sub-layer of thefirst semiconductor layer structure, the seed sub-layer of the firstsemiconductor layer structure, the second semiconductor layer structure,the first silicon sub-layer of the second semiconductor layer structure,the quantum well layer stack, the plurality of first quantum welllayers, the plurality of second quantum well layers, the detectionsystem, the emitter device, the detector device, the fluid sensor, andmethods for forming the semiconductor device) mentioned in connectionwith one or more specific examples may be combined with one or more ofthe other examples.

Various embodiments relate to a single-platform integration of germaniumquantum dots (QDs) and quantum wells (QW) grown by selective-growth CVDas a mid-infrared source and mid-infrared detector for optoelectronicapplications, for example.

Various embodiments relate to an absorption-based sensor for gases andliquids, for example.

Example embodiments may further provide a computer program having aprogram code for performing one of the above methods, when the computerprogram is executed on a computer or processor. A person of skill in theart would readily recognize that acts of various above-described methodsmay be performed by programmed computers. Herein, some exampleembodiments are also intended to cover program storage devices, e.g.,digital data storage media, which are machine or computer readable andencode machine-executable or computer-executable programs ofinstructions, wherein the instructions perform some or all of the actsof the above-described methods. The program storage devices may be,e.g., digital memories, magnetic storage media such as magnetic disksand magnetic tapes, hard drives, or optically readable digital datastorage media. Further example embodiments are also intended to covercomputers programmed to perform the acts of the above-described methodsor (field) programmable logic arrays ((F)PLAs) or (field) programmablegate arrays ((F)PGAs), programmed to perform the acts of theabove-described methods.

The description and drawings merely illustrate the principles of thedisclosure. It will thus be appreciated that those skilled in the artwill be able to devise various arrangements that, although notexplicitly described or shown herein, embody the principles of thedisclosure and are included within its spirit and scope. Furthermore,all examples recited herein are principally intended expressly to beonly for pedagogical purposes to aid the reader in understanding theprinciples of the disclosure and the concepts contributed by theinventor(s) to furthering the art, and are to be construed as beingwithout limitation to such specifically recited examples and conditions.Moreover, all statements herein reciting principles, aspects, andembodiments of the disclosure, as well as specific examples thereof, areintended to encompass equivalents thereof.

Functional blocks denoted as “means for . . . ” (performing a certainfunction) shall be understood as functional blocks comprising circuitrythat is configured to perform a certain function, respectively. Hence, a“means for s.th.” may as well be understood as a “means configured to orsuited for s.th.”. A means configured to perform a certain functiondoes, hence, not imply that such means necessarily is performing thefunction (at a given time instant).

Functions of various elements shown in the figures, including anyfunctional blocks labeled as “means”, “means for providing a sensorsignal”, “means for generating a transmit signal.”, etc., may beprovided through the use of dedicated hardware, such as “a signalprovider”, “a signal processing unit”, “a processor”, “a controller”,etc. as well as hardware capable of executing software in associationwith appropriate software. Moreover, any entity described herein as“means”, may correspond to or be implemented as “one or more modules”,“one or more devices”, “one or more units”, etc. When provided by aprocessor, the functions may be provided by a single dedicatedprocessor, by a single shared processor, or by a plurality of individualprocessors, some of which may be shared. Moreover, explicit use of theterm “processor” or “controller” should not be construed to referexclusively to hardware capable of executing software, and mayimplicitly include, without limitation, digital signal processor (DSP)hardware, network processor, application specific integrated circuit(ASIC), field programmable gate array (FPGA), read only memory (ROM) forstoring software, random access memory (RAM), and non-volatile storage.Other hardware, conventional and/or custom, may also be included.

It should be appreciated by those skilled in the art that any blockdiagrams herein represent conceptual views of illustrative circuitryembodying the principles of the disclosure. Similarly, it will beappreciated that any flow charts, flow diagrams, state transitiondiagrams, pseudo code, and the like represent various processes whichmay be substantially represented in computer readable medium and soexecuted by a computer or processor, whether or not such computer orprocessor is explicitly shown.

Furthermore, the following claims are hereby incorporated into theDetailed Description, where each claim may stand on its own as aseparate embodiment. While each claim may stand on its own as a separateembodiment, it is to be noted that—although a dependent claim may referin the claims to a specific combination with one or more otherclaims—other embodiments may also include a combination of the dependentclaim with the subject matter of each other dependent or independentclaim. Such combinations are proposed herein unless it is stated that aspecific combination is not intended. Furthermore, it is intended toinclude also features of a claim to any other independent claim even ifthis claim is not directly made dependent to the independent claim.

It is further to be noted that methods disclosed in the specification orin the claims may be implemented by a device having means for performingeach of the respective acts of these methods.

Further, it is to be understood that the disclosure of multiple acts orfunctions disclosed in the specification or claims may not be construedas to be within the specific order. Therefore, the disclosure ofmultiple acts or functions will not limit these to a particular orderunless such acts or functions are not interchangeable for technicalreasons. Furthermore, in some embodiments a single act may include ormay be broken into multiple sub acts. Such sub acts may be included andpart of the disclosure of this single act unless explicitly excluded.

1. A semiconductor device comprising: a plurality of quantum structures comprising predominantly germanium, wherein the plurality of quantum structures are formed on a first semiconductor layer structure, wherein quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×10¹¹ quantum structures per cm², wherein the plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.
 2. The semiconductor device according to claim 1, wherein the plurality of quantum structures comprise germanium and antimony.
 3. A semiconductor device, comprising: a plurality of quantum structures formed on a first semiconductor layer structure, wherein quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm, wherein the plurality of quantum structures comprise germanium and antimony, and wherein the plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 5 μm and 7 μm or to absorb light with a light absorption maximum at a wavelength of between 5 μm and 7 μm.
 4. The semiconductor device according to claim 3, wherein the plurality of quantum structures have an area density of at least 1×10¹⁰ quantum structures per cm².
 5. The semiconductor device according to claim 3, wherein the plurality of quantum structures comprise between 1% to 10% antimony.
 6. The semiconductor device according to claim 3, wherein the first semiconductor layer structure comprises a first silicon sub-layer having a doping of a first conductivity type.
 7. The semiconductor device according to claim 6, wherein the first semiconductor layer structure further comprises a first silicon buffer sub-layer formed on the first silicon sub-layer.
 8. The semiconductor device according to claim 7, wherein the first semiconductor layer structure further comprises a first intrinsic silicon sub-layer, a highly-doped silicon sub-layer and a seed sub-layer comprising silicon-germanium or silicon doped with antimony or boron formed between the first silicon sub-layer and the plurality of quantum structures.
 9. The semiconductor device according to claim 3, further comprising a second semiconductor layer structure covering the plurality of quantum structures, wherein the second semiconductor layer structure comprises a first silicon sub-layer.
 10. The semiconductor device according to claim 9, wherein the second semiconductor layer structure further comprises an intrinsic silicon spacer layer covering the plurality of quantum structures.
 11. The semiconductor device according to claim 10, wherein a tensile strain between the plurality of quantum structures, the first semiconductor layer structure and the intrinsic silicon spacer layer lies between 1% and 4%.
 12. The semiconductor device according to claim 3, wherein the plurality of quantum structures are pyramid shaped or dome shaped.
 13. A semiconductor device, comprising: a quantum well layer stack comprising a plurality of first quantum well layers and a plurality of second quantum well layers, wherein first quantum well layers of the plurality of first quantum well layers and second quantum well layers of the plurality of second quantum well layers are arranged alternatingly on a first semiconductor layer structure, wherein the first quantum well layers of the plurality of first quantum well layers comprise silicon-germanium and the second quantum well layers of the plurality of second quantum well layers comprise silicon, wherein the first quantum well layers of the plurality of first quantum well layers and the second quantum well layers of the plurality of second quantum well layers have a thickness of below 100 nm, and wherein the quantum well layer stack is configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.
 14. The semiconductor device according to claim 13, wherein the first quantum well layers comprise silicon_(x)-germanium_(1-x), wherein x lies between 0.25 and 0.35.
 15. The semiconductor device according to claim 13, further comprising: a first electrical contact structure in electrical contact with a first semiconductor layer structure; and a second electrical contact structure in electrical contact with a second semiconductor layer structure, wherein the plurality of first quantum well layers and the plurality of second quantum well layers are arranged between the first semiconductor layer structure and the second semiconductor layer structure, wherein the quantum well layer stack is configured to emit light with a light emission maximum at a wavelength of between 5 μm and 7 μm or to absorb light with a light absorption maximum at a wavelength of between 5 μm and 7 μm based on a voltage applied to the first electrical contact structure and the second electrical contact structure, wherein the applied voltage lies between 1 V and 10 V.
 16. A detection system, comprising: an emitter device comprising a semiconductor device according to claim 1; a detector device comprising a semiconductor device according to claim 1, wherein the emitter device and the detector device are arranged so that light emitted by the emitter device interacts with a substance to be detected by the detector device before reaching the detector device.
 17. A method for forming a semiconductor device, the method comprising: forming a plurality of quantum structures comprising predominantly germanium on a first semiconductor layer structure, wherein quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 1×10¹⁰ quantum structures per cm², wherein the plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm, wherein the plurality of quantum structures are grown at least by using low pressure chemical vapor deposition.
 18. The method according to claim 17, further comprising providing a gaseous germanium precursor at a surface of the first semiconductor layer structure at a temperature of between 550° to 700° to form the plurality of quantum structures.
 19. The method according to claim 18, further comprising forming a layer of antimony on a plurality of germanium structures after providing the gaseous germanium precursor, and heating the plurality of germanium structures so that the antimony interdiffuses with the germanium to form the plurality of quantum structures.
 20. A fluid sensor, comprising; a detector comprising a processing module 790 configured to generate a detection signal based on light emitted by an emitter and propagated through a fluid, wherein the detector or the emitter comprises a plurality of quantum structures comprising predominantly germanium, wherein the plurality of quantum structures are formed on a first semiconductor layer structure, wherein quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 1×10¹⁰ quantum structures per cm², wherein the plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm. 